Resist stochastics ultimately limit patterning, a result of the interplay of resist composition, exposure, bake and development. Metrologies like OCD and CD-SEM only measure critical dimension (CD) and uniformity after development, offering limited process control. Each step modifies molecular bonds, leaving infrared (IR, 5-20 μm) fingerprints in activated chemical structures. When combining IR with AFM, nearfield effects resolve chemical alterations at the nm scale. This seminar presents how IR-AFM offers both chemical selectivity ánd lateral resolution to resolve modifications in latent (D)SA and EUVL images, even before post-expose-bake (PEB) and development. Metrology data from these images yield deeper insights in SA, thus facilitating improvement of DSA materials and processes. Ultimately, chemical metrology by IR-AFM can contribute to process control in Semicon manufacturing.
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