Our Laboratory focuses on developing spintronic materials and devices and exploring the underlying physics of magnetic nanostructures. Spintronics offers exciting opportunities for various device applications including ultra-low power non-volatile memory, reconfigurable logic, IoT sensors, and so on. In particular, we investigate spin-orbit torques (SOTs), which enable ultrafast and energy-efficient magnetization switching, providing an effective writing scheme for magnetic random-access memory (MRAM). We have proposed new spin current source materials based on ferromagnet/non-magnet bilayers that generate unconventional SOTs with out-of-plane spin polarization, enabling field-free SOT switching of perpendicular magnetization. Furthermore, we have exploited this technology to implement spintronic security devices and probabilistic computing.

Beyond SOTs, we further develop novel materials and devices to enhance the spintronic device performance and functionality. Our research includes orbital current-induced spin torques, electric field control of the magnetization, spin thermoelectrics, spin Hall nano-oscillators, and other emerging technologies.