While growing a short period superlattice (SPS), due to an in-plane strain field along [110] direction, depositing atoms cross penetrate, which spontaneously generates potential modulation along the lateral [110] direction. In such growth condition, lateral superlattice can be achieved. Limiting the thickness of the SPS layer, similarly, one can grow a lateral nanowire. We measured photoluminescence (PL) of an InP-GaP lateral nanowire under pulsed magnetic fields to 50 T. We observed strong negative diamagnetic shift in a certain magnetic field direction due may to a variation of exciton center of mass potential. We will also discuss the current achievement of pulsed magnetic field facility at Dankook University. We successfully developed 1.6 MJ (9 kV) capacitor bank for the generation of pulsed magnetic fields. We obtained ~47 T at 6 KV charging voltage with the 22 ms total transient time of the magnetic pulse. We plan to develop higher and longer magnetic field facility in future.