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It is of great interest to create the inversion asymmetric topological insulators because these materials are desirable for hosting both a large Rashba spin-splitting (RSS) and robust topological surface states (TSS), which are potentially interesting in realization of new topological phenomena in practical material systems.
In first part of the talk, I will discuss on the growth of various TIs by modified Bridgman method using rotating heat field [1], by molecular- and gas-phase epitaxy, and in particular built in p-n junction [2] will be considered. Recent results on the BiTeI electronic structure [3,4] transformation forming the asymmetric Bi2Te2I structure with a sequence of intermediate spin-polarized states, reflecting the transition from RSS to a mixed type of states characterized by gapless TSS and preserving RSS will be presented.
In the second part of the talk, I will concentrate on the experimental study of polarized cathodoluminescence induced by low-energy spin-polarized electrons injected into GaAs/AlGaAs QWs structures [5] with the aim to create 3D spin-detector with spatial resolution which can be integrated into the registration channel of modern ARPES systems.

[1] K.A. Kokh, et al., CrystEngComm. 16, 581 (2014).
[2] T. Bathon, et al., Advanced Materials 28, 2183 (2016).
[3] H. Maäss,et al., Nature Communications 7, 11621 (2016).
[4] S. Fiedler, et al., New J. Phys. 20 063035 (2018).
[5] O.E. Tereshchenko, et al., Scientific Reports 7, 16154, (2017).

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