Electronic and spin structure investigations on Dirac and Rashba materials and beyond
It is of great interest to create the inversion asymmetric topological insulators because these materials are desirable for hosting both a large Rashba spin-splitting (RSS) and robust topological surface states (TSS), which are potentially interesting in realization of new topological phenomena in practical material systems.
In first part of the talk, I will discuss on the growth of various TIs by modified Bridgman method using rotating heat field , by molecular- and gas-phase epitaxy, and in particular built in p-n junction  will be considered. Recent results on the BiTeI electronic structure [3,4] transformation forming the asymmetric Bi2Te2I structure with a sequence of intermediate spin-polarized states, reflecting the transition from RSS to a mixed type of states characterized by gapless TSS and preserving RSS will be presented.
In the second part of the talk, I will concentrate on the experimental study of polarized cathodoluminescence induced by low-energy spin-polarized electrons injected into GaAs/AlGaAs QWs structures  with the aim to create 3D spin-detector with spatial resolution which can be integrated into the registration channel of modern ARPES systems.
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