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Spintronics encounter challenges and inherent difficulties for manipulating quantum mechanical features in materials relying on specific properties. The recent discovery of the Orbital Hall effect lead to new proposals for manipulating the spin degree of freedom without heavy large-Z materials, in that sense, overcoming the scarcity of materials for developing new devices.

On the other hand, graphene still appears as a recurrent source of new physics mostly related to its particular electronic properties.
In this talk, I’ll give a short introduction of a new topic so-called Orbitronics whereby using numerical simulations we were able to disentangle spin and orbital-charge interconversion in Bi1-xSbx and Co/Al interfaces , I’ll comment as well some ideas related to THz emission in Spintronics devices along with first principle calculations such heterostructures.

[1] H. Park et al., Topological Surface-Dominated Spintronic THz Emission in Topologically Nontrivial Bi1−xSbx Films. Adv. Sci. 2022, 9, 2200948
[2] E. Rongione et al., Spin-Momentum Locking and Ultrafast Spin-Charge Conversion in Ultrathin Epitaxial Bi1 − xSbx Topological Insulator. Adv. Sci. 2023, 10, 2301124.
[3] S. Rho et al., Exceptional Spin-to-Charge Conversion in Selective Band Topology of Bi/Bi1-xSbx with Spintronic Singularity. Adv. Funct. Mater., 33: 2300175.
[4] A. Pezo et al., Theory of spin and orbital charge conversion at the surface states of Bi1-x Sbx topological insulator.
[5] A. Pezo et al. Anatomy of torques from orbital Rashba textures: the case of Co/Al interfaces (https://arxiv.org/abs/2503.16319)

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