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My Research Presentations | |
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My research filed is the observation of GaAs (110) surface fabricated by
cleaved-edge overgrowth method with growth-interrupt annealing at high temperature.
I extensively study the atomic steps with the characteristic shape on (110) GaAs surface/ interface
evolved by the intentionally introduced Ga flux gradient.
The following files (microsoft power point, html, eps) are uploaded for both purpose -
to attract the public interest on my reaserach and
to review my data anytimes and anywhere especially for our research partners.
If you have questions or requests to my research, please e-mail
me oh@issp.u-tokyo.ac.jp
Akiyama Lab seminar 1.(maybe my first presentation here,
mainly about AFM measurements)
Observation of characteristic surface.ppt
2002 Annual meeting (fall) of the physical society of Japan（Chubu University
6-9 Sept. Address number：6pSA-12 Field: 4
Observation of surface atomic steps on (110) GaAs quantum well
manufactured by
cleaved-edge overgrowth method.
Ji-Won Oh1*, Masahiro Yoshita1, Hidefumi Akiyama1, Loren N.
Pfeiffer2, Ken W. West2
1 Institute for Solid State Physics, University of Tokyo, and CREST, JST
2Bell Laboratories, Lucent Technologies, U.S.A
Akiyama Lab seminar 2. (micro-PL experiment)
実験結果整理.ppt
2003 58th Annual meeting (spring) of the physical society of
Japan（Tohoku University）
28-31, March, 2003 Address number：30pYH-3 Field: 4
Micro-Photoluminescence from GaAs (110) with atomically flat
surface.
Ji-Won Oh1*, Masahiro Yoshita1, Hidefumi Akiyama1, Loren N.
Pfeiffer2, Ken W. West2
1 Institute for Solid State Physics, University of Tokyo, and
CREST, JST
2Bell Laboratories, Lucent Technologies, U.S.A
Presentation for Ogawa group (theoretical physics) in Ohsaka
Univ.
My_research_ogawapresen.ppt
Joint research presentation at Karuizawa, Naganoken with Konokami group, Ema group
The 11th International Conference on Modulated Semiconductor
Structures -MSS11-
PA-55(poster presentation) 14 - 18, July 2003 Nara, Japan
Carrier Diffusion on Atomically Flat (110) GaAs Quantum Wells
Ji-Won Oh1*, Masahiro Yoshita1, Hidefumi Akiyama1, Loren N.
Pfeiffer2, Ken W. West2
1 Institute for Solid State Physics, University of Tokyo, and
CREST, JST
2Bell Laboratories, Lucent Technologies, U.S.A
The 9th International Symposium on Advanced Physical Fields
(APF-9)
"Characterization of Artificial Nanostructures and Nanomaterials"
Poster Presentation, March 1-4,2004, NIMS (Tsukuba)
J-W. Oh*, M. Yoshita, Y. Hayamizu, A. Ishii, H. Akiyama, L.
N. Pfeiffer, K. W. West (Univ. Tokyo)
Reforming AFM data taken at circa. April. 2002 (5 um X 5 um AFM image)
Series : 5-18-00.2 (25 nm growth) 600C 10 minutes annealing
Sample: First growth: 5-18-00 (Substrate:F22754, First growth: 5-18-00.2 Received: 30/May/2000
Ga23 + R3Ga23 + R3 (rescan of same Ga23)
Series : 1-25-01.2Sample: First growth: Jan. 1-25-01 (Substrate:12-18-00.1,
(30 nm growth
600C 10 minutes annealing)
Received: 1/Feb/2000
P3+ x (rescan of partial region of p3)
AFM data taken at circa. Nov. 2003
Series : 6-19-03.1
Sample: 6-19-03.1 # 4 (Postion 4 among 6 samples )
First growth: 6-19-03 (Substrate:cleave yoshita,
Description 650C 10 minutes annealing
Panoramic view of 6-19-03.1 # 4 (Connected 50 um X 50 um AFM images along
0.31- 0.75 mm regions)
Pan_0.34-0.75mm.pdf
Cross-sectional scan (50 um X 50 um) around 0.58-0.59 mm regions of 6-19-03.1
# 4
58_59_2D.pdf
Photoluminescence images of (110) GaAs quantum well shown as a map
using Microphotoluminescence technique.
Series : 1-25-01.1Sample
First growth: 1-25-01.1 (Substrate:1-3-01.1 (Position 1), First growth: 1-25-01.1
Received: 1/Feb/2000 Note: Position 1,3,5: 13-01.1 substrate, Position 2.5: 12-18-00.1 substrate.
PL map data of b5-a circa. Sept. 2003 by J-W. Oh
0-600, 600-1200, 1200-1800,1800-2400,2400-3050 eps
Light weight version (300dpi): 0-600, 600-1200, 1200-1800,1800-2400,2400-3050 eps
Note: Pleae save as ""after downloading these files, not as ".ps"!
PL map data of b5-b circa. Sept. 2004 by J-W. Oh
0-600, 0600-1200, 1200-1800,1800-2400,2400-3000, 3000-3600, 3600-4200, 4200-4800
Rescanning AFM of Ga 23 sample of (110) GaAs quantum well taken June, 2004
(5x5, 10 x 10, 15x 15 um)
Manifest of Ga23 sample
Series : 5-18-00.2 (25 nm growth) 600C 10 minutes annealing
Sample: First growth: 5-18-00 (Substrate:F22754, First growth: 5-18-00.2 Received: 30/May/2000