CEO growth: 5-18-00.2 (110) 5nm GaAs (490C growth) annealed at 600C for 10min # This sample (Ga23) was at Postion 2

Substrate:F22754 (GaAs (001) wafer)

AFM Measurement Name: Ga23 (April 2002) and R3 (May 2002) by Ji-Won Oh in Akiyama-Lab

Meaurement Area 5umx5um

left:FRONT (001)------right BACK (001)

top: Thin GaAs-------bottom: Thick GaAs ------- 1%/mm or 0.25ML/mm

0.005mm R3-13

0.01mm G23-16

0.04mm G23-15

0.08mm R3-12

0.15mm R3-11

0.18mm G23-14

0.19mm R3-10

0.21mm R3-9

0.26mm R3-8

0.28mm G23-13

0.35mm R3-7

0.45mm R3-6

0.59mm R3-5

0.65mm R3-4

0.65mm G23-12

0.76mm R3-3

0.855mm R3-2

0.86mm G23-11

0.94mm R3-1

1.42mm G23-10

1.62mm G23-9

1.69mm G23-8

1.96mm G23-7

2.04mm G23-6

2.41mm G23-5

2.6mm G23-4

2.9mm G23-3

3.04mm G23-2

3.1mm G23-1