CEO growth: 5-18-00.2 (110) 5nm GaAs (490C growth) annealed at 600C for 10min # This sample (Ga23) was at Postion 2
Substrate:F22754 (GaAs (001) wafer)
AFM Measurement Name: Ga23 (April 2002) and R3 (May 2002) by Ji-Won Oh in Akiyama-Lab
Meaurement Area 5umx5um
left:FRONT (001)------right BACK (001)
top: Thin GaAs-------bottom: Thick GaAs ------- 1%/mm or 0.25ML/mm
0.005mm R3-13
0.01mm G23-16
0.04mm G23-15
0.08mm R3-12
0.15mm R3-11
0.18mm G23-14
0.19mm R3-10
0.21mm R3-9
0.26mm R3-8
0.28mm G23-13
0.35mm R3-7
0.45mm R3-6
0.59mm R3-5
0.65mm R3-4
0.65mm G23-12
0.76mm R3-3
0.855mm R3-2
0.86mm G23-11
0.94mm R3-1
1.42mm G23-10
1.62mm G23-9
1.69mm G23-8
1.96mm G23-7
2.04mm G23-6
2.41mm G23-5
2.6mm G23-4
2.9mm G23-3
3.04mm G23-2
3.1mm G23-1